smd type ic transistors smd type npn transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 absolute maximum ratings ta = 25 parameter symbol rating unit collector - base voltage v cbo 40 v collector-emittervoltage v ceo 25 v emitter - base voltage v ebo 5v collector current - continuous i c 500 ma collector power dissipation p c 300 mw junction temperature t j 150 storage temperature t stg -55to150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector - base breakdown voltage v cbo i c =100 a i e =0 40 v collector - emitter breakdown voltage v ceo i c =0.1ma i b =0 25 v emitter - base breakdown voltage v ebo i e =100 a i c =0 5v collector cut - off current i cbo v cb =40 v , i e =0 0.1 a collector cut -off current i ceo v ce =20v , i b =0 0.1 a emitter cut - off current i ebo v eb =5v,i c =0 0.1 a v ce =1v, i c = 50ma 120 400 v ce =1v, i c =500ma 40 collector - emitter saturation voltage v ce(sat) i c =500 ma, i b =50ma 0.6 v base - emitter saturation voltage v be(sat) i c =500 ma, i b =50ma 1.2 v transition frequency f t v ce =6v, i c = 20ma,f=30mhz 150 mhz dc current gain h fe features excellent h fe linearity collector current :i c =0.5a h fe classification marking rank l h j hfe 120 to 200 200 to 350 300 to 400 j3
smd type ic transistors smd type typical characteristics fig.1 static characteristic fig.2 dc current gain fig.3 base emitter saturation voltage collector emitter saturation voltage fig.4 current gain bandwidth product
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